Samsung promised to start a mass release of 236 layer flash flash memory 3D NAND by the end of the year

Samsung promised to start a mass release of 236 layer flash flash memory 3D NAND by the end of the y

This summer, the largest producers of flash memory announced their intention to master the next frontier in the complexity of 3D NAND. American Microsoft Technology reported at the start of the 232 layer crystals, SK hynix raised the stakes to 238 layers. Now Samsung Electronics is ready to declare that the 236 layer memory would be delivered before the end of the year.

As can be seen, there is very little variation in the 3D NAND multilayered memory characteristics supplied by the leading producers. However, the latter company, Samsung Electronics, has not been able to shut down competitive offers, but has reached the middle of the spectrum. However, it is Samsung that remains the largest producer of memory chips, and for it, the ability to produce 3D NAND with defined characteristics in adequate volumes is crucial.

Samsung Electronics now accounts for 35% of the flash memory market, but supplies 3D NAND chips with no more than 176 layers. It is ready to increase it by 60 layers by the end of the year. This month, the Korean giant will open a new research centre specializing in developing promising types of solid memory. It appears that the Samsung Electronics has given a new impetus to the final amnesty this month to the formal head of Lee Jae-yong, who is being given the opportunity to chair the board of directors in an empire based on his grandfather.